? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 1700 v v cgr t j = 25c to 150c, r ge = 1m 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 60 a i c110 t c = 110c 24 a i cm t c = 25c, 1ms 230 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 50 a (rbsoa) clamped inductive load v ces 1360 v p c t c = 25c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-268 4 g to-247 6 g ds100190a(03/13) IXBT24N170 ixbh24n170 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 1700 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces , v ge = 0v 25 a t j = 125c 500 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 1 2.5 v t j = 125c 2.4 v v ces = 1700v i c110 = 24a v ce(sat) 2.5v high voltage, high gain bimosfet tm monolithic bipolar mos transistor features z high blocking voltage z international standard packages z low conduction losses advantages z low gate drive requirement z high power density applications z switch-mode and resonant-mode power supplies z uninterruptible power supplies (ups) z laser generators z capacitor discharge circuits z ac switches g = gate c = collector e = emiiter tab = collector to-247 (ixbh) g e c (tab) c to-268 (ixbt) e g c (tab)
ixys reserves the right to change limits, test conditions and dimensions. IXBT24N170 ixbh24n170 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 15 25 s c ies 2790 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 163 pf c res 60 pf q g(on) 140 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 16 nc q gc 60 nc t d(on) 33 ns t r 82 ns t d(off) 315 ns t f 750 ns t d(on) 35 ns t r 155 ns t d(off) 325 ns t f 960 ns r thjc 0.50 c/w r thcs to-247 0.21 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times, t j = 125c i c = i c110 , v ge = 15v v ce = 850v, r g = 10 resistive switching times, t j = 25c i c = i c110 , v ge = 15v v ce = 850v, r g = 10 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 24a, v ge = 0v 2.8 v t rr 1.06 s i rm 26 a i f = 12a, v ge = 0v, -di f /dt = 100a/ s v r = 100v to-247 outline terminals: 1 - gate 2 - collector 3 - emitter to-268 outline terminals: 1 - gate 2,4 - collector 3 - emitter e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc
? 2013 ixys corporation, all rights reserved IXBT24N170 ixbh24n170 fig. 1. output characteristics @ t j = 25oc 0 8 16 24 32 40 48 0 0.5 1 1.5 2 2.5 3 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 5v 7v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 v ce - volts i c - amperes v ge = 25v 21v 19v 17v 15v 11v 9v 13v 5v 7v fig. 3. output characteristics @ t j = 125oc 0 8 16 24 32 40 48 0 0.5 1 1.5 2 2.5 3 3.5 v ce - volts i c - amperes v ge = 25v 19v 15v 13v 11v 9v 5v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 48a i c = 24a i c = 12a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 7 9 11 13 15 17 19 21 23 25 v ge - volts v ce - volts i c = 48a t j = 25oc 12a 24a fig. 6. input admittance 0 10 20 30 40 50 60 70 80 90 100 3456789 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXBT24N170 ixbh24n170 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100 110 120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 q g - nanocoulombs v ge - volts v ce = 850v i c = 24a i g = 10ma fig. 11. reverse-bias safe operating area 0 10 20 30 40 50 60 200 400 600 800 1000 1200 1400 1600 1800 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 v f - volts i f - amperes t j = 125oc t j = 25oc
? 2013 ixys corporation, all rights reserved IXBT24N170 ixbh24n170 ixys ref: b_24n170(6n)9-09-09 fig. 14. resistive turn-on rise time vs. collector current 0 50 100 150 200 250 300 350 10 15 20 25 30 35 40 45 50 i c - amperes t r - nanoseconds t j = 125oc t j = 25oc r g = 10 ? , v ge = 15v v ce = 850v fig. 15. resistive turn-on switching times vs. gate resistance 100 150 200 250 300 350 400 450 500 10 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 90 100 t d ( on ) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 48a i c = 24a fig. 16. resistive turn-off switching times vs. junction temperature 400 500 600 700 800 900 1000 1100 1200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 260 270 280 290 300 310 320 330 340 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 850v i c = 48a i c = 24a fig. 17. resistive turn-off switching times vs. collector current 400 500 600 700 800 900 1000 1100 1200 1300 10 15 20 25 30 35 40 45 50 i c - amperes t f - nanoseconds 240 260 280 300 320 340 360 380 400 420 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 850v t j = 25oc, 125oc fig. 13. resistive turn-on rise time vs. junction temperature 0 50 100 150 200 250 300 350 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 10 ? , v ge = 15v v ce = 850v i c = 48a i c = 24a fig. 18. resistive turn-off switching times vs. gate resistance 500 600 700 800 900 1000 1100 1200 1300 1400 1500 10 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 100 200 300 400 500 600 700 800 900 1000 1100 t d ( off ) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 850v i c = 48a i c = 24a
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